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onsemi

FJE3303H1TU

MFR #FJE3303H1TU

FPN#FJE3303H1TU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole, TO-126-3
Datasheet
45063-Datasheet
Quote Only
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJE3303
Packaging TypeTube
Packaging Quantity1920
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-126-3
ConfigurationNPN
Gain Bandwidth4MHz
Maximum Collector Current1.5A
Maximum Collector Emitter Breakdown Voltage400V
Maximum Collector Emitter Saturation Voltage3V @ 500mA, 1.5A
Maximum Cutoff Collector Current10µA (ICBO)
Maximum DC Current Gain16 @ 500mA, 2V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation20W
Minimum DC Current Gain8 @ 500mA, 2V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle