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FJD5553TM
MFR #FJD5553TM
FPN#FJD5553TM-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 400 V 3 A 1.25 W Surface Mount TO-252AA
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FJD5553 |
Packaging Type | Tape and Reel |
Packaging Quantity | 2500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | N/A |
Life Cycle Status | Active |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 400V |
Maximum Collector Emitter Saturation Voltage | 500mV @ 200mA, 1A |
Maximum Cutoff Collector Current | N/A |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.25W |
Minimum DC Current Gain | 30 @ 400mA, 3V |
Minimum Operating Temperature | N/A |
Package Type | TO-252 (DPAK) |
Technology Type | SI |
Transistor Type | Single |