(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FGP10N60UNDF
onsemi

FGP10N60UNDF

MFR #FGP10N60UNDF

FPN#FGP10N60UNDF-FL

MFRonsemi

Part DescriptionIGBT NPT 600 V 20 A 139 W Through Hole TO-220-3
Datasheet
45035-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFGP10N60UNDF
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge37nC
IGBT TypeNPT
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current20A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.45V @ 15V, 10A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C
Maximum Power Dissipation139W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C
Minimum Switching FrequencyN/A
Package TypeTO-220-3
Pulsed Collector Current30A
Reverse Recovery Time37.7ns
Switching Off Delay Time52.2ns
Switching Off Energy50µJ
Switching On Delay Time8ns
Switching On Energy150µJ
Technology TypeN/A