
FGL35N120FTDTU
MFR #FGL35N120FTDTU
FPN#FGL35N120FTDTU-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 1200 V 70 A 368 W Through Hole TO-264-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FGL35N120FTD | 
| Packaging Type | Tube | 
| Packaging Quantity | 375 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Configuration | Single | 
| Gate Charge | 210nC | 
| IGBT Type | Trench Field Stop | 
| Input Type | Standard | 
| Life Cycle Status | Obsolete | 
| Maximum Collector Current | 70A | 
| Maximum Collector Emitter Breakdown Voltage | 1.2kV | 
| Maximum Collector Emitter Saturation Voltage | 2.2V @ 15V, 35A | 
| Maximum Gate Emitter Voltage | ±25V | 
| Maximum Junction Temperature | 150°C | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 368W | 
| Maximum Switching Frequency | N/A | 
| Minimum Junction Temperature | -55°C | 
| Minimum Operating Temperature | N/A | 
| Minimum Switching Frequency | N/A | 
| Package Type | HPM F2 | 
| Pulsed Collector Current | 105A | 
| Reverse Recovery Time | 337ns | 
| Switching Off Delay Time | 172ns | 
| Switching Off Energy | 1.7mJ | 
| Switching On Delay Time | 34ns | 
| Switching On Energy | 2.5mJ | 
| Technology Type | N/A | 
