
onsemi
FGL35N120FTDTU
MFR #FGL35N120FTDTU
FPN#FGL35N120FTDTU-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 1200 V 70 A 368 W Through Hole TO-264-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGL35N120FTD |
| Packaging Type | Tube |
| Packaging Quantity | 375 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | Single |
| Gate Charge | 210nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 70A |
| Maximum Collector Emitter Breakdown Voltage | 1.2kV |
| Maximum Collector Emitter Saturation Voltage | 2.2V @ 15V, 35A |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 368W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | HPM F2 |
| Pulsed Collector Current | 105A |
| Reverse Recovery Time | 337ns |
| Switching Off Delay Time | 172ns |
| Switching Off Energy | 1.7mJ |
| Switching On Delay Time | 34ns |
| Switching On Energy | 2.5mJ |
| Technology Type | N/A |
