(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

FGL35N120FTDTU

MFR #FGL35N120FTDTU

FPN#FGL35N120FTDTU-FL

MFRonsemi

Part DescriptionIGBT Trench Field Stop 1200 V 70 A 368 W Through Hole TO-264-3
Datasheet
45031-Datasheet
Quote Onlymore info
Multiples of: 375more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFGL35N120FTD
Packaging TypeTube
Packaging Quantity375
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationSingle
Gate Charge210nC
IGBT TypeTrench Field Stop
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current70A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.2V @ 15V, 35A
Maximum Gate Emitter Voltage±25V
Maximum Junction Temperature150°C
Maximum Power Dissipation368W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C
Minimum Switching FrequencyN/A
Package TypeHPM F2
Pulsed Collector Current105A
Reverse Recovery Time337ns
Switching Off Delay Time172ns
Switching Off Energy1.7mJ
Switching On Delay Time34ns
Switching On Energy2.5mJ
Technology TypeN/A