
FGH60T65SQD-F155
MFR #FGH60T65SQD-F155
FPN#FGH60T65SQD-F155-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 120A 333W TO247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FGH60T65SQD-F155 | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | Single | 
| Gate Charge | 79nC | 
| IGBT Type | Trench Field Stop | 
| Input Type | Standard | 
| Life Cycle Status | Active | 
| Maximum Collector Current | 120A | 
| Maximum Collector Emitter Breakdown Voltage | 650V | 
| Maximum Collector Emitter Saturation Voltage | N/A | 
| Maximum Gate Emitter Voltage | ±20V | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 333W | 
| Maximum Switching Frequency | N/A | 
| Minimum Junction Temperature | -55°C | 
| Minimum Operating Temperature | N/A | 
| Minimum Switching Frequency | N/A | 
| Package Type | TO-247-3LD | 
| Pulsed Collector Current | 240A | 
| Reverse Recovery Time | 34.6ns | 
| Switching Off Delay Time | 97.6ns | 
| Switching Off Energy | 167µJ | 
| Switching On Delay Time | 21.6ns | 
| Switching On Energy | 585µJ | 
| Technology Type | N/A | 
