
FGH60N60SMD
MFR #FGH60N60SMD
FPN#FGH60N60SMD-FL
MFRonsemi
Part DescriptionIGBT Field Stop 600V 120A 600W Through Hole, TO-247-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FGH60N60SMD |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 189nC |
IGBT Type | Field Stop |
Input Type | Standard |
Life Cycle Status | Active |
Maximum Collector Current | 120A |
Maximum Collector Emitter Breakdown Voltage | 600V |
Maximum Collector Emitter Saturation Voltage | 2.5V @ 15V, 60A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 600W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-247-3LD |
Pulsed Collector Current | 180A |
Reverse Recovery Time | 30ns |
Switching Off Delay Time | 104ns |
Switching Off Energy | 450µJ |
Switching On Delay Time | 18ns |
Switching On Energy | 1.26mJ |
Technology Type | N/A |