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FGH50N6S2D
onsemi

FGH50N6S2D

MFR #FGH50N6S2D

FPN#FGH50N6S2D-FL

MFRonsemi

Part DescriptionIGBT 600 V 75 A 463 W Through Hole TO-247-3
Datasheet
45021-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFGH50N6S2D
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge70nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current75A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 30A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation463W
Maximum Switching Frequency200kHz
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3LD
Pulsed Collector Current240A
Reverse Recovery Time55ns
Switching Off Delay Time55ns
Switching Off Energy250µJ
Switching On Delay Time13ns
Switching On Energy260µJ
Technology TypeN/A