onsemi
FGH50N6S2D
MFR #FGH50N6S2D
FPN#FGH50N6S2D-FL
MFRonsemi
Part DescriptionIGBT 600 V 75 A 463 W Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGH50N6S2D |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 70nC |
| IGBT Type | N/A |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 75A |
| Maximum Collector Emitter Breakdown Voltage | 600V |
| Maximum Collector Emitter Saturation Voltage | 2.7V @ 15V, 30A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 463W |
| Maximum Switching Frequency | 200kHz |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247-3LD |
| Pulsed Collector Current | 240A |
| Reverse Recovery Time | 55ns |
| Switching Off Delay Time | 55ns |
| Switching Off Energy | 250µJ |
| Switching On Delay Time | 13ns |
| Switching On Energy | 260µJ |
| Technology Type | N/A |