
FGAF30S65AQ
MFR #FGAF30S65AQ
FPN#FGAF30S65AQ-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650V 60A 83W Through Hole, TO-3PF-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FGAF30S65AQ |
Packaging Type | Tube |
Packaging Quantity | 30 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 58nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Life Cycle Status | Obsolete |
Maximum Collector Current | 60A |
Maximum Collector Emitter Breakdown Voltage | 650V |
Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 30A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 83W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-3PF-3 |
Pulsed Collector Current | 90A |
Reverse Recovery Time | 267ns |
Switching Off Delay Time | 92ns |
Switching Off Energy | 140µJ |
Switching On Delay Time | 18ns |
Switching On Energy | 515µJ |
Technology Type | N/A |