
FGA6560WDF
MFR #FGA6560WDF
FPN#FGA6560WDF-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650 V 120 A 306 W Through Hole TO-3PN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGA6560WDF |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 84nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 120A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.3V @ 15V, 60A |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Junction Temperature | 175°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 306W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-3PN |
| Pulsed Collector Current | 180A |
| Reverse Recovery Time | 110ns |
| Switching Off Delay Time | 71ns |
| Switching Off Energy | 520µJ |
| Switching On Delay Time | 25.6ns |
| Switching On Energy | 2.46mJ |
| Technology Type | N/A |
