FGA30N65SMD
MFR #FGA30N65SMD
FPN#FGA30N65SMD-FL
MFRonsemi
Part DescriptionIGBT Field Stop 650 V 60 A 300 W Through Hole TO-3PN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGA30N65SMD |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 87nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 60A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.5V @ 15V, 30A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C |
| Maximum Power Dissipation | 300W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Switching Frequency | N/A |
| PK Package Dimensions Note | Popular package size 33% from Suppliers use this Dimension |
| Package Type | TO-3P |
| Pulsed Collector Current | 90A |
| Reverse Recovery Time | 35ns |
| Switching Off Delay Time | 102ns |
| Switching Off Energy | 208µJ |
| Switching On Delay Time | 14ns |
| Switching On Energy | 716µJ |
| Technology Type | N/A |