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FFSB20120A
onsemi

FFSB20120A

MFR #FFSB20120A

FPN#FFSB20120A-FL

MFRonsemi

Part DescriptionRectifier Single Silicon Carbide Schottky 1.2kV 32A TO-263-3 T/R
Datasheet
97596-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryDiodes and Rectifiers
Family NameFFSB20120A
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Average Current32A
Capacitance1220pF @ 1V, 100kHz
Diode Configuration1 Independent
Diode TypeSilicon Carbide Schottky
Life Cycle StatusActive
Maximum Forward Voltage1.75V
Maximum Junction Temperature175°C
Maximum Reverse DC Voltage1.2kV
Minimum Junction Temperature-55°C
Minimum Peak Inverse VoltageN/A
Non-Repetitive Surge Current135A
Package TypeTO-263 (D2PAK)
Peak Forward CurrentN/A
Reverse Leakage Current200µA @ 1.2kV
Reverse Recovery Time0ns
SpeedNo Recovery Time > 500mA (Io)
Technology TypeSIC
Test Current20A
Thermal ResistanceN/A
TypeSingle