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onsemi

FFSB0865B

MFR #FFSB0865B

FPN#FFSB0865B-FL

MFRonsemi

Part DescriptionDiode Silicon Carbide Schottky 650 V 10.1A (DC) Surface Mount DPAK-2 (TO-263-2)
Datasheet
44953-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryDiodes and Rectifiers
Family NameFFSB0865B
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Average Current10.1A
Capacitance336pF @ 1V, 100kHz
Diode Configuration1 Independent
Diode TypeSilicon Carbide Schottky
Life Cycle StatusActive
Maximum Forward Voltage1.7V
Maximum Junction Temperature175°C
Maximum Reverse DC Voltage650V
Minimum Junction Temperature-55°C
Minimum Peak Inverse VoltageN/A
Non-Repetitive Surge Current56A
Package TypeD²PAK-2 (TO-263-2)
Peak Forward CurrentN/A
Reverse Leakage Current40µA @ 650V
Reverse Recovery Time0ns
SpeedNo Recovery Time > 500mA (Io)
Technology TypeSIC
Test Current8A
Thermal ResistanceN/A
TypeSingle