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FDZ451PZ-P
onsemi

FDZ451PZ-P

MFR #FDZ451PZ-P

FPN#FDZ451PZ-P-FL

MFRonsemi

Part DescriptionMOSFET P-CH 20V 6WLCSP
Datasheet
190636-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDZ451PZ
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance555pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.6A (Ta)
Maximum Drain to Source Resistance140 mOhm @ 2A, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge8.8nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type4-WLCSP (0.8x0.8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.7nC
Typical Gate to Source Charge600pC