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FDZ1323NZ
MFR #FDZ1323NZ
FPN#FDZ1323NZ-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 20V 10A 6WLCSP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDZ1323NZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 5000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 20V |
| Drive Voltage | N/A |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 12V |
| Input Capacitance | 2055pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 10A |
| Maximum Drain to Source Resistance | 13 mOhm @ 1A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 500mW |
| Maximum Pulse Drain Current | 40A |
| Maximum Total Gate Charge | 24nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-WLCSP (1.3x2.3) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 5.4nC |
| Typical Gate to Source Charge | 1.9nC |