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FDZ1323NZ
onsemi

FDZ1323NZ

MFR #FDZ1323NZ

FPN#FDZ1323NZ-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 20V 10A 6WLCSP
Datasheet
140018-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDZ1323NZ
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel, Common Drain
Drain Source Voltage20V
Drive VoltageN/A
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12V
Input Capacitance2055pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current10A
Maximum Drain to Source Resistance13 mOhm @ 1A, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation500mW
Maximum Pulse Drain Current40A
Maximum Total Gate Charge24nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-WLCSP (1.3x2.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.4nC
Typical Gate to Source Charge1.9nC