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onsemi

FDY4000CZ

MFR #FDY4000CZ

FPN#FDY4000CZ-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel 20V 600mA, 350mA SOT-563
Datasheet
135007-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDY4000CZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSOT-563
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage20V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V, ±8V
Input Capacitance60pF
Input Capacitance Test Voltage10V
Maximum Continuous Drain Current600mA, 350mA
Maximum Drain to Source Resistance700 mOhm @ 600mA, 4.5V, 1.2 Ohm @ 350mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation446mW
Maximum Pulse Drain Current1A
Maximum Total Gate Charge1.1nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge300pC
Typical Gate to Source Charge200pC