FDY2000PZ
MFR #FDY2000PZ
FPN#FDY2000PZ-FL
MFRonsemi
Part DescriptionDual P-Channel Specified PowerTrench MOSFET -20V, -0.35A, 1.2
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDY2000PZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 100pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 350mA (Ta) |
| Maximum Drain to Source Resistance | 1.2 Ohm @ 350mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 446mW (Ta) |
| Maximum Pulse Drain Current | 1A |
| Maximum Total Gate Charge | 1.4nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 300pC |
| Typical Gate to Source Charge | 200pC |