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FDV304P-F169
MFR #FDV304P-F169
FPN#FDV304P-F169-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 25 V 460mA (Ta) 350mW (Ta) Surface Mount, SOT-23-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDV304P |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 25V |
Drive Voltage | 2.7V, 4.5V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | -8V |
Input Capacitance | 63pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 460mA (Ta) |
Maximum Drain to Source Resistance | 1.1 Ohm @ 500mA, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 350mW (Ta) |
Maximum Pulse Drain Current | 1.5A |
Maximum Total Gate Charge | 1.5nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | SOT-23-3 (TO-236) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 250pC |
Typical Gate to Source Charge | 320pC |