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FDV304P-F169

FDV304P-F169

MFR #FDV304P-F169

FPN#FDV304P-F169-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 25 V 460mA (Ta) 350mW (Ta) Surface Mount, SOT-23-3
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDV304P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage25V
Drive Voltage2.7V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage-8V
Input Capacitance63pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current460mA (Ta)
Maximum Drain to Source Resistance1.1 Ohm @ 500mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation350mW (Ta)
Maximum Pulse Drain Current1.5A
Maximum Total Gate Charge1.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge250pC
Typical Gate to Source Charge320pC