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FDV302P
onsemi

FDV302P

MFR #FDV302P

FPN#FDV302P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 25V 120mA (Ta) SOT-23-3 T/R
Datasheet
44907-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDV302P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage25V
Drive Voltage2.7V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage-8V
Input Capacitance11pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current120mA (Ta)
Maximum Drain to Source Resistance10 Ohm @ 200mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation350mW (Ta)
Maximum Pulse Drain Current500mA
Maximum Total Gate Charge310pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge40pC
Typical Gate to Source Charge110pC