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FDT86244
onsemi

FDT86244

MFR #FDT86244

FPN#FDT86244-FL

MFRonsemi

Part DescriptionMOSFET N-CH 150V 2.8A SOT223-4
Datasheet
165634-Datasheet
Quote Only
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Multiples of: 4000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDT86244
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeSOT-223
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance395pF
Input Capacitance Test Voltage75V
Maximum Continuous Drain Current2.8A (Tc)
Maximum Drain to Source Resistance128 mOhm @ 2.8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.2W (Ta)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC
Typical Gate to Source Charge1.4nC