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FDT439N
onsemi

FDT439N

MFR #FDT439N

FPN#FDT439N-FL

MFRonsemi

Part DescriptionMOSFET N-CH 30V 6.3A SOT223-4
Datasheet
154766-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDT439N
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeSOT-223
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance500pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current6.3A (Ta)
Maximum Drain to Source Resistance45 mOhm @ 6.3A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.7nC
Typical Gate to Source Charge900pC