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FDS9958-F085
onsemi

FDS9958-F085

MFR #FDS9958-F085

FPN#FDS9958-F085-FL

MFRonsemi

Part DescriptionMOSFET Array 2 P-Channel (Dual) 60V 2.9A 900mW Surface Mount, 8-SOIC
Datasheet
44896-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS9958_F085
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage60V
Drive VoltageN/A
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1020pF
Input Capacitance Test Voltage30V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.9A
Maximum Drain to Source Resistance105 mOhm @ 2.9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW
Maximum Pulse Drain Current12A
Maximum Total Gate Charge23nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge2nC