(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS9934C
onsemi

FDS9934C

MFR #FDS9934C

FPN#FDS9934C-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel Array 20V 6.5A 900mW Surface Mount, 8-SOIC
Datasheet
44895-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS9934C
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive (NRND)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage20V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12V
Input Capacitance650pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current6.5A, 5A
Maximum Drain to Source Resistance30 mOhm @ 6.5A, 4.5V, 55 mOhm @ 3.2A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation900mW
Maximum Pulse Drain Current30A, 20A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.7nC
Typical Gate to Source Charge1.2nC