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FDS8896
onsemi

FDS8896

MFR #FDS8896

FPN#FDS8896-FL

MFRonsemi

Part DescriptionMOSFET N-CH 30V 15A 8SOIC
Datasheet
168286-Datasheet
Quote Only
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Multiples of: 2500
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS8896
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive (NRND)
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2525pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current15A (Ta)
Maximum Drain to Source Resistance6 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current110A
Maximum Total Gate Charge67nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge7nC