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FDS8858CZ
onsemi

FDS8858CZ

MFR #FDS8858CZ

FPN#FDS8858CZ-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel 30V 8.6A, 7.3A 8-SOIC
Datasheet
168284-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS8858CZ
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V, ±25V
Input Capacitance1205pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current8.6A, 7.3A
Maximum Drain to Source Resistance17 mOhm @ 8.6A, 10V, 20.5 mOhm @ 7.3A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW
Maximum Pulse Drain Current20A
Maximum Total Gate Charge24nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.4nC
Typical Gate to Source Charge6.1nC