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FDS86267P
onsemi

FDS86267P

MFR #FDS86267P

FPN#FDS86267P-FL

MFRonsemi

Part DescriptionMOSFET P-CH 150V 2.2A 8SOIC
Datasheet
165625-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS86267P
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance1130pF
Input Capacitance Test Voltage75V
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance255 mOhm @ 2.2A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current34A
Maximum Total Gate Charge16nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge3.2nC