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FDS86240
onsemi

FDS86240

MFR #FDS86240

FPN#FDS86240-FL

MFRonsemi

Part DescriptionMOSFET N-CH 150V 7.5A 8SOIC
Datasheet
165624-Datasheet
Quote Only
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Multiples of: 2500
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS86240
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2570pF
Input Capacitance Test Voltage75V
Maximum Continuous Drain Current7.5A (Ta)
Maximum Drain to Source Resistance19.8 mOhm @ 7.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 5W (Tc)
Maximum Pulse Drain Current30A
Maximum Total Gate Charge40nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge7.6nC