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FDS86106
onsemi

FDS86106

MFR #FDS86106

FPN#FDS86106-FL

MFRonsemi

Part DescriptionN-Channel 100 V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC
Datasheet
44873-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS86106
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance208pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current3.4A (Ta)
Maximum Drain to Source Resistance105 mOhm @ 3.4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation5W (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge800pC
Typical Gate to Source Charge800pC