FDS6986AS
MFR #FDS6986AS
FPN#FDS6986AS-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 30V 6.5A, 7.9A 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS6986AS |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 16V, 20V |
| Input Capacitance | 720pF, 550pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 6.5A, 7.9A |
| Maximum Drain to Source Resistance | 29 mOhm @ 6.5A, 10V, 20 mOhm @ 7.9A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA, 3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 20A, 30A |
| Maximum Total Gate Charge | 9nC, 8nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.1nC, 1.5nC |
| Typical Gate to Source Charge | 2.3nC, 2nC |