FDS6982AS
MFR #FDS6982AS
FPN#FDS6982AS-FL
MFRonsemi
Part DescriptionMOSFET Array 30V 6.3A 8.6A 900mW Surface Mount, 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS6982AS |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 610pF, 1250pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 6.3A (Ta), 8.6A (Ta) |
| Maximum Drain to Source Resistance | 28 mOhm @ 6.3A, 10V, 13.5 mOhm @ 8.6A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA, 3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 20A, 30A |
| Maximum Total Gate Charge | 15nC, 30nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.4nC, 3.6nC |
| Typical Gate to Source Charge | 1.8nC, 3.1nC |