FDS6900AS-G
MFR #FDS6900AS-G
FPN#FDS6900AS-G-FL
MFRonsemi
Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW (Ta) Surface Mount 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS6900AS |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 600pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 6.9A, 8.2A |
| Maximum Drain to Source Resistance | 27 mOhm @ 6.9A, 10V, 22 mOhm @ 8.2A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA, 3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 20A, 30A |
| Maximum Total Gate Charge | 15nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 61% from Suppliers use this Dimension |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.2nC |
| Typical Gate to Source Charge | 1.7nC, 1.6nC |