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FDS6900AS-G
onsemi

FDS6900AS-G

MFR #FDS6900AS-G

FPN#FDS6900AS-G-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW (Ta) Surface Mount 8-SOIC
Datasheet
44863-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS6900AS
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance600pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.9A, 8.2A
Maximum Drain to Source Resistance27 mOhm @ 6.9A, 10V, 22 mOhm @ 8.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current20A, 30A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge1.7nC, 1.6nC