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onsemi

FDS6679AZ-G

MFR #FDS6679AZ-G

FPN#FDS6679AZ-G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 13A (Ta) 8-SOIC T/R
Datasheet
136970-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS6679AZ
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance3845pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13A (Ta)
Maximum Drain to Source Resistance9.3 mOhm @ 13A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current65A
Maximum Total Gate Charge96nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge10nC