(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS6675BZ-G
onsemi

FDS6675BZ-G

MFR #FDS6675BZ-G

FPN#FDS6675BZ-G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 30V 11A (Ta) Surface Mount, 8-SOIC
Datasheet
44844-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS6675BZ
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance2470pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta)
Maximum Drain to Source Resistance13 mOhm @ 11A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current55A
Maximum Total Gate Charge62nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11.4nC
Typical Gate to Source Charge7.2nC