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FDS5690-NBBM009A
onsemi

FDS5690-NBBM009A

MFR #FDS5690-NBBM009A

FPN#FDS5690-NBBM009A-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 7A (Ta) 8-SOIC T/R
Datasheet
99772-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS5690
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1107pF
Input Capacitance Test Voltage30V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7A (Ta)
Maximum Drain to Source Resistance28 mOhm @ 7A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge32nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.8nC
Typical Gate to Source Charge4nC