FDS4935BZ
MFR #FDS4935BZ
FPN#FDS4935BZ-FL
MFRonsemi
Part DescriptionMOSFET Array 2 P-Channel (Dual) 30V 6.9A 900mW Surface Mount, 8-SOIC
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS4935BZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 1360pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 6.9A (Ta) |
| Maximum Drain to Source Resistance | 22 mOhm @ 6.9A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 50A |
| Maximum Total Gate Charge | 40nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 7nC |
| Typical Gate to Source Charge | 4nC |