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FDS4685
onsemi

FDS4685

MFR #FDS4685

FPN#FDS4685-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount, 8-SOIC
Datasheet
44830-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS4685
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1872pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current8.2A (Ta)
Maximum Drain to Source Resistance27 mOhm @ 8.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.2W (Ta)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.1nC
Typical Gate to Source Charge5.6nC