(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS4501H
onsemi

FDS4501H

MFR #FDS4501H

FPN#FDS4501H-FL

MFRonsemi

Part DescriptionMosfet Array N and P-Channel 30V, 20V 9.3A, 5.6A 1W Surface Mount 8-SOIC
Datasheet
44826-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS4501H
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage30V, 20V
Drive Voltage4.5V, 10V, 2.5V, 4.5V
FET FeatureStandard
FET OptionsComplementary
FET TypeArray
Gate to Source Voltage±20V, ±8V
Input Capacitance1958pF, 1312pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9.3A (Ta), 5.6A (Ta)
Maximum Drain to Source Resistance18 mOhm @ 9.3A, 10V, 46 mOhm @ 5.6A, 4.5V
Maximum Gate to Source Threshold Voltage3V @ 250µA, 1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge27nC, 21nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC, 2nC
Typical Gate to Source Charge4nC, 2.5nC