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FDS4465-G
onsemi

FDS4465-G

MFR #FDS4465-G

FPN#FDS4465-G-FL

MFRonsemi

Part DescriptionP-Channel 20V 13.5A (Ta) 1.2W (Ta) Surface Mount, 8-SOIC
Datasheet
44824-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS4465
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance8237pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13.5A (Ta)
Maximum Drain to Source Resistance8.5 mOhm @ 13.5A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.2W (Ta)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge120nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge20nC