(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS3890
onsemi

FDS3890

MFR #FDS3890

FPN#FDS3890-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 80V 4.7A 8-SOIC T/R
Datasheet
110544-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS3890
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1180pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current4.7A
Maximum Drain to Source Resistance44 mOhm @ 4.7A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation900mW
Maximum Pulse Drain Current20A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.8nC
Typical Gate to Source Charge4.5nC