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FDPF085N10A
onsemi

FDPF085N10A

MFR #FDPF085N10A

FPN#FDPF085N10A-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 100V 40A (Tc), TO-220-3
Datasheet
44789-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPF085N10A
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2695pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current40A (Tc)
Maximum Drain to Source Resistance8.5 mOhm @ 40A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation33.3W (Tc)
Maximum Pulse Drain Current200A
Maximum Total Gate Charge40nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.5nC
Typical Gate to Source Charge9.7nC