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FDPC8016S-B801
onsemi

FDPC8016S-B801

MFR #FDPC8016S-B801

FPN#FDPC8016S-B801-FL

MFRonsemi

Part DescriptionTransistor MOSFET Array Dual N-CH 25V 8-Pin PQFN T/R
Datasheet
44788-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPC8016S
Lifecycle StatusObsolete (Unconfirmed)
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance2375pF, 6600pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete (Unconfirmed)
Maximum Continuous Drain Current20A (Ta), 60A (Tc), 35A (Ta), 100A (Tc)
Maximum Drain to Source Resistance3.8 mOhm @ 20A, 10V, 1.4 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA, 2.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 21W (Tc), 2.3W (Ta), 42W (Tc)
Maximum Pulse Drain Current75A, 140A
Maximum Total Gate Charge35nC, 94nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC, 6.3nC
Typical Gate to Source Charge3.4nC, 10nC