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onsemi

FDPC8012S

MFR #FDPC8012S

FPN#FDPC8012S-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 25V 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) 8-SON T/R
Datasheet
100908-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPC8012S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage12V
Input Capacitance1075pF, 3456pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Maximum Drain to Source Resistance7 mOhm @ 12A, 4.5V, 2.2 mOhm @ 23A, 4.5V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 2W (Ta)
Maximum Pulse Drain Current40A, 120A
Maximum Total Gate Charge8nC, 25nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypePowerclip-33
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 6.4nC
Typical Gate to Source Charge2.3nC, 7.8nC