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FDPC1012S-P
onsemi

FDPC1012S-P

MFR #FDPC1012S-P

FPN#FDPC1012S-P-FL

MFRonsemi

Part DescriptionFDPC102ASYMMETRDUN-CHANNMOSFET
Datasheet
100747-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPC1012S-P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12V
Input Capacitance1075pF, 3456pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Maximum Drain to Source Resistance7 mOhm @ 12A, 4.5V, 2.2 mOhm @ 23A, 4.5V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA, 2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 2W (Ta)
Maximum Pulse Drain Current40A, 120A
Maximum Total Gate Charge8nC, 25nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 6.4nC
Typical Gate to Source Charge2.3nC, 7.8nC