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FDP8D5N10C
onsemi

FDP8D5N10C

MFR #FDP8D5N10C

FPN#FDP8D5N10C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 12A (Ta), 50A (Tc) TO-220-3 Tube
Datasheet
97588-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP8D5N10C
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2475pF
Input Capacitance Test Voltage50V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current76A (Tc)
Maximum Drain to Source Resistance8.5 mOhm @ 76A, 10V
Maximum Gate to Source Threshold Voltage4V @ 130µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 107W (Tc)
Maximum Pulse Drain Current304A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220AB
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC
Typical Gate to Source Charge9nC