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FDP8030L
onsemi

FDP8030L

MFR #FDP8030L

FPN#FDP8030L-FL

MFRonsemi

Part DescriptionN-Channel 30 V 80A (Ta) 187W (Tc) Through Hole TO-220-3
Datasheet
44777-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP8030L
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance10500pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current80A (Ta)
Maximum Drain to Source Resistance3.5 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation187W (Tc)
Maximum Pulse Drain Current300A
Maximum Total Gate Charge170nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-65°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge48nC
Typical Gate to Source Charge27nC