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FDP4D5N10C
onsemi

FDP4D5N10C

MFR #FDP4D5N10C

FPN#FDP4D5N10C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 128A (Tc) 2.4W (Ta) 150W (Tc) Through Hole, TO-220-3
Datasheet
97587-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP4D5N10C
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5065pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current128A (Tc)
Maximum Drain to Source Resistance4.5 mOhm @ 100A, 10V
Maximum Gate to Source Threshold Voltage4V @ 310µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 150W (Tc)
Maximum Pulse Drain Current512A
Maximum Total Gate Charge68nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220AB
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9nC
Typical Gate to Source Charge19nC