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FDP33N25
onsemi

FDP33N25

MFR #FDP33N25

FPN#FDP33N25-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 250V 33A (Tc) 235W (Tc) Through Hole, TO-220-3
Datasheet
101216-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP33N25
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2135pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current33A (Tc)
Maximum Drain to Source Resistance94 mOhm @ 16.5A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation235W (Tc)
Maximum Pulse Drain Current132A
Maximum Total Gate Charge48nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge10nC