FDP20N50
MFR #FDP20N50
FPN#FDP20N50-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 20A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDP20N50 |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 500V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 3120pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 20A (Tc) |
| Maximum Drain to Source Resistance | 230 mOhm @ 10A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 250W (Tc) |
| Maximum Pulse Drain Current | 80A |
| Maximum Total Gate Charge | 59.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 21.6nC |
| Typical Gate to Source Charge | 14.8nC |