onsemi
FDP090N10
MFR #FDP090N10
FPN#FDP090N10-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 100V 75A(Tc) 208W(Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDP090N10 |
| Packaging Type | Tube |
| Packaging Quantity | 800 |
| Lifecycle Status | Last Time Buy |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-220-3 |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 8225pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 75A (Tc) |
| Maximum Drain to Source Resistance | 9 mOhm @ 75A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.5V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 208W (Tc) |
| Maximum Pulse Drain Current | 300A |
| Maximum Total Gate Charge | 116nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 22nC |
| Typical Gate to Source Charge | 37nC |