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FDP083N15A-F102
onsemi

FDP083N15A-F102

MFR #FDP083N15A-F102

FPN#FDP083N15A-F102-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 150V 83A(Tc) 294W(Tc) Through Hole, TO-220-3
Datasheet
95400-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP083N15A
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6040pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current83A (Tc)
Maximum Drain to Source Resistance8.3 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation294W (Tc)
Maximum Pulse Drain Current468A
Maximum Total Gate Charge84nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13.5nC
Typical Gate to Source Charge19.1nC