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FDP053N08B-F102
onsemi

FDP053N08B-F102

MFR #FDP053N08B-F102

FPN#FDP053N08B-F102-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 75A (Tc) TO-220-3 Tube
Datasheet
97586-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP053N08B
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5960pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current75A (Tc)
Maximum Drain to Source Resistance5.3 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation146W (Tc)
Maximum Pulse Drain Current480A
Maximum Total Gate Charge85nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge15.3nC
Typical Gate to Source Charge26.7nC